Now China has become a powerful country in science and technology, but do you know how powerful China's technology is? The manned space station alone is not enough, and now it has successfully broken through the key technology of nuclear fusion, even leading the world by 15 years. Does this mean that China is not far from the artificial sun? It turned out that the fully superconducting tokamak nuclear fusion experimental device developed by China at the Hefei Research Institute of the Chinese Academy of Sciences successfully achieved a record of 101 seconds of continuous operation at 120 million degrees Celsius, and broke the world record. Compared with the previous record in South Korea, China has time has been directly extended by 5 times, and it seems that we are one step closer to the practical stage of artificial sun.
The success of nuclear fusion technology will lead to the development of Aluminum nitride (AlN).
Overview of spherical aluminum nitride AlN powder
Aluminum nitride (AlN) is a solid nitride of aluminum. It has a high thermal conductivity of 321w/(m · K) and is an electrical insulator. Its wurtzite phase (w-aln) has a band gap of about 6 EV at room temperature, which has potential applications in optoelectronics working at deep UV frequency.
Aluminum nitride AlN powder is stable at high temperatures in an inert atmosphere and melts at about 2200 °C. In vacuum, AlN decomposes at about 1800°C. In air, surface oxidation occurs above 700 ℃, and a 5-10 nm thick surface oxide layer is detected even at room temperature. This oxide layer protects the material at temperatures up to 1370 °C. Above this temperature, a large amount of oxidation will occur. It is stable at 980°C in hydrogen and carbon dioxide atmosphere. The material is slowly dissolved in inorganic acid through grain boundary erosion and in strong alkali through erosion of aluminum nitride grains. The material is slowly hydrolyzed in water. Aluminum nitride is resistant to most molten salts, including chloride and cryolite. Aluminum nitride can be patterned using reactive ion etching based on Cl2.
Aluminum nitride is an inorganic powder of high thermal conductivity material. Because of its excellent comprehensive properties such as high thermal conductivity, good insulation, low dielectric constant and expansion coefficient equivalent to Si material, it has attracted more and more attention. It is widely used in large-scale integrated circuits, high thermal conductivity substrates in electronic field, inorganic thermal conductivity fillers, high-performance structural ceramics and other fields.
With the advent of 5g era, all kinds of electronic devices are becoming more and more integrated, and the power is increasing. Higher requirements are put forward for its heat dissipation performance. For various packaging resins used in the electronic field, the best way for thermal conductive materials to improve their heat dissipation performance is to add inorganic insulating fillers with high thermal conductivity, and aluminum nitride is one of the best choices. Increasing the filling amount requires the powder to be dense spherical and the particle size range from tens of microns to hundreds of microns, so as to ensure the combination of large and small particles and achieve the purpose of high filling and good fluidity.
At present, the known preparation methods of spherical aluminum nitride powder are mainly carbothermal reduction method, direct nitriding method and in-situ nitriding method, but there are some defects in varying degrees, such as poor particle size distribution, insufficient sphericity, low density, loose and porous, which hinder its application in heat conducting materials.
Thermal spraying process: aluminum nitride powder can be thermally sprayed to form electrical insulation and thermal conductive coating. Chemical / physical vapor deposition (CVD/PVD): aluminum nitride coating is deposited by CVD or PVD to provide electrical insulation and thermal conductivity coating.
Powder metallurgy (P/M): aluminum powder is pressed into parts by hot pressing or cold pressing and sintering.
Application of spherical aluminum nitride AlN powder
Aluminum nitride is a kind of inorganic powder with high thermal conductivity. Because of its high thermal conductivity, good insulation, low dielectric constant, and silicon material has considerable expansion coefficient and excellent comprehensive properties, it has attracted more and more attention. It is widely used in the fields of large-scale integrated circuits, electronic substrates, high thermal conductivity, thermal conductivity inorganic fillers, high-performance structural ceramics and so on.
With the advent of 5g era, the integration of various electronic devices is higher and higher, and the functions are more and more powerful. In order to improve the heat dissipation performance of various packaging resins used in the electronic field, the best way is to add inorganic insulating fillers with high thermal conductivity to the materials. Aluminum nitride is one of the best choices. In order to increase the filling amount, the powder is required to be dense and spherical, and the particle size ranges from tens of microns to hundreds of microns, so as to ensure that the particle size and particle size of the composite can achieve high filling and good fluidity
Due to the piezoelectric properties of AlN, epitaxially grown thin film crystalline aluminum nitride is used for surface acoustic wave sensor (SAW) deposited on silicon wafer. One application is RF filter, which is widely used in mobile phones. It is called thin film bulk acoustic resonator (FBAR). This is a MEMS device that uses aluminum nitride sandwiched between two metal layers. AlN is also used to construct piezoelectric micromechanical ultrasonic transducers that emit and receive ultrasound and can be used for aerial ranging over a distance of up to one meter. The metallization method allows AlN to be used in electronic applications similar to alumina and beryllium oxide. As inorganic quasi one-dimensional nanotubes, AlN nanotubes and carbon nanotubes have been proposed to be used as chemical sensors for toxic gases. At present, a lot of research has been carried out on the development of light-emitting diodes working under ultraviolet light using gallium nitride based semiconductors. Using aluminum gallium nitride alloy, the wavelength as short as 250 nm has been realized. In 2006, low efficiency aln# led emission at 210 nm was reported.
Price of spherical aluminum nitride AlN powder
The price of spherical aluminum nitride AlN powder particles will change randomly with the production cost, transportation cost, international situation, exchange rate, market supply and demand and other factors ofspherical aluminum nitride AlN powder. Tanki new materials Co.,Ltd. aims to help industries and chemical wholesalers find high-quality and low-cost nano materials and chemicals by providing a full range of customized services. If you are looking for spherical aluminum nitride AlN powder, please feel free to send an inquiry to obtain the latest price of spherical aluminum nitride AlN powder.
Spherical aluminum nitride AlN powder supplier
As a global supplier of spherical aluminum nitride AlN powder, Tanki new materials Co.,Ltd. has rich experience in the performance, application and cost-effective manufacturing of advanced and engineering materials. The company has successfully developed a series of powder materials (molybdenum disilicide), lanthanum nitride (LAN powder, calcium silicide, iron boride), high-purity targets, functional ceramics and structural devices, and provided OEM services.
Chemical Composition of Aluminum Nitride AlN powder
With Tesla's new factory in Germany starting Aluminum nitride (AlN). In the future, the demand for Aluminum nitride (AlN) will become more and more extensive. Please feel free to contact us for the latest news on Aluminum nitride (AlN).
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