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Application situation of silicon carbide industry

wallpapers Industry 2021-01-04
1. Silicon carbide (SiC) is an ideal material for high-power devices
Silicon is the first-generation basic material in the semiconductor industry. At present, more than 95% of integrated circuit components in the world are manufactured with silicon as a substrate. At present, with the development of applications such as electric vehicles and 5G, the demand for high-power, high-voltage and high-frequency devices is growing rapidly.
 
When the voltage is greater than 900V and greater power is to be achieved, silicon-based power MOSFETs and IGBTs will expose shortcomings, which will be limited in terms of conversion efficiency, switching frequency, and operating temperature. The silicon carbide (SiC) material has a large forbidden bandwidth (3 times of Si), high thermal conductivity (3.3 times of Si or 10 times of GaAs), high electron saturation migration rate (2.5 times of Si) and breakdown High electric field (10 times that of Si or 5 times that of GaAs) and other properties, SiC devices have irreplaceable advantages in the fields of high temperature, high voltage, high frequency, high power electronic devices and extreme environmental applications such as aerospace, military, and nuclear energy. The defects of traditional semiconductor materials and devices in practical applications are gradually becoming the mainstream of power semiconductors.
 
Silicon carbide is made by high-temperature smelting of raw materials such as quartz sand, petroleum coke (or coal coke), sawdust (salt is needed to produce green silicon carbide) and other raw materials through resistance furnace.
 
2. Advantages of SiC power semiconductor devices
The third-generation semiconductors are also called wide-bandgap semiconductors due to their physical structure. They are mainly represented by gallium nitride and silicon carbide. Their performance characteristics are comparable to those of the first-generation silicon. , The second generation of gallium arsenide is different, so that it can have the advantages of high forbidden bandwidth, high thermal conductivity, high breakdown field strength, high electron saturation drift rate, etc. so that it can develop more suitable for high temperature, high power, Miniaturized power semiconductor devices under severe conditions such as high voltage, high frequency and radiation resistance can effectively break through the physical limits of traditional silicon-based power semiconductor devices and their materials.
 
On the whole, silicon carbide's high-voltage resistance is 10 times that of silicon, high-temperature resistance is twice that of silicon, and high-frequency ability is twice that of silicon. Compared with silicon-based modules, silicon carbide diodes and switch tubes are composed of modules. (All-carbon module), not only has the advantages of the intrinsic characteristics of silicon carbide material, but also can reduce the volume of the module by more than 50% and reduce the electronic conversion loss by more than 80%, thereby reducing the overall cost.

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